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O interstitial generation and diffusion in high temperature annealed Si/SiO2/Si structures.

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Title: O interstitial generation and diffusion in high temperature annealed Si/SiO2/Si structures.
Authors: Devine, R. A. B., Mathiot, D., Warren, W. L.
Source: Journal of Applied Physics; March 1 1996, Vol. 79, p2302-2308, 7p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500284693
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: O interstitial generation and diffusion in high temperature annealed Si/SiO2/Si structures.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; March 1 1996, Vol. 79, p2302-2308, 7p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500284693
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      – Type: doi
        Value: 10.1063/1.361155
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      – Code: eng
        Text: English
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        PageCount: 7
        StartPage: 2302
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      – TitleFull: O interstitial generation and diffusion in high temperature annealed Si/SiO2/Si structures.
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            NameFull: Devine, R. A. B.
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            NameFull: Mathiot, D.
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            NameFull: Warren, W. L.
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              Text: March 1 1996
              Type: published
              Y: 1996
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              Value: 79
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