APA (7th ed.) Citation

Friedrichs, P., Burte, E. P., & Schörner, R. (1996). Interface properties of metal-oxide-semiconductor structures on n-type 6H and 4H-SiC. Journal of Applied Physics, 79, 7814. https://doi.org/10.1063/1.362389

Chicago Style (17th ed.) Citation

Friedrichs, P., E. P. Burte, and R. Schörner. "Interface Properties of Metal-oxide-semiconductor Structures on N-type 6H and 4H-SiC." Journal of Applied Physics 79 (1996): 7814. https://doi.org/10.1063/1.362389.

MLA (9th ed.) Citation

Friedrichs, P., et al. "Interface Properties of Metal-oxide-semiconductor Structures on N-type 6H and 4H-SiC." Journal of Applied Physics, vol. 79, 1996, p. 7814, https://doi.org/10.1063/1.362389.