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Interface properties of metal-oxide-semiconductor structures on n-type 6H and 4H-SiC.

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Bibliographic Details
Title: Interface properties of metal-oxide-semiconductor structures on n-type 6H and 4H-SiC.
Authors: Friedrichs, P., Burte, E. P., Schörner, R.
Source: Journal of Applied Physics; May 15 1996, Vol. 79, p7814-7819, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500316642
AccessLevel: 2
PubType: Academic Journal
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  Data: Interface properties of metal-oxide-semiconductor structures on n-type 6H and 4H-SiC.
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        Value: 10.1063/1.362389
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 7814
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      – TitleFull: Interface properties of metal-oxide-semiconductor structures on n-type 6H and 4H-SiC.
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            NameFull: Friedrichs, P.
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            NameFull: Burte, E. P.
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              Text: May 15 1996
              Type: published
              Y: 1996
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              Value: 79
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