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Interface properties of metal-oxide-semiconductor structures on n-type 6H and 4H-SiC.

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Bibliographic Details
Title: Interface properties of metal-oxide-semiconductor structures on n-type 6H and 4H-SiC.
Authors: Friedrichs, P., Burte, E. P., Schörner, R.
Source: Journal of Applied Physics; May 15 1996, Vol. 79, p7814-7819, 6p
Database: Applied Science & Technology Source
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