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Photocurrent transients in almost ideal silicon p-n junctions.

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Bibliographic Details
Title:	Photocurrent transients in almost ideal silicon p-n junctions.
Authors:	Basso, G., Pellegrini, B.
Source:	Journal of Applied Physics; 8/15/1995, Vol. 78, p2504-2508, 5p
Database:	Applied Science & Technology Source

Description
ISSN:	00218979
DOI:	10.1063/1.360105