Inhomogeneous and temperature-dependent p-InGaAs/n-InP band offset modification by silicon δ doping: an internal photoemission study.

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Bibliographic Details
Title: Inhomogeneous and temperature-dependent p-InGaAs/n-InP band offset modification by silicon δ doping: an internal photoemission study.
Authors: Almeida, J., dell'Orto, Tiziana, Coluzza, C.
Source: Journal of Applied Physics; September 1 1995, Vol. 78, p3258-3261, 4p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.360014