APA (7th ed.) Citation

Almeida, J., dell'Orto, T., & Coluzza, C. (1995). Inhomogeneous and temperature-dependent p-InGaAs/n-InP band offset modification by silicon δ doping: An internal photoemission study. Journal of Applied Physics, 78, 3258. https://doi.org/10.1063/1.360014

Chicago Style (17th ed.) Citation

Almeida, J., Tiziana dell'Orto, and C. Coluzza. "Inhomogeneous and Temperature-dependent P-InGaAs/n-InP Band Offset Modification by Silicon δ Doping: An Internal Photoemission Study." Journal of Applied Physics 78 (1995): 3258. https://doi.org/10.1063/1.360014.

MLA (9th ed.) Citation

Almeida, J., et al. "Inhomogeneous and Temperature-dependent P-InGaAs/n-InP Band Offset Modification by Silicon δ Doping: An Internal Photoemission Study." Journal of Applied Physics, vol. 78, 1995, p. 3258, https://doi.org/10.1063/1.360014.