Inhomogeneous and temperature-dependent p-InGaAs/n-InP band offset modification by silicon δ doping: an internal photoemission study.

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Title: Inhomogeneous and temperature-dependent p-InGaAs/n-InP band offset modification by silicon δ doping: an internal photoemission study.
Authors: Almeida, J., dell'Orto, Tiziana, Coluzza, C.
Source: Journal of Applied Physics; September 1 1995, Vol. 78, p3258-3261, 4p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 500323669
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PubType: Academic Journal
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  Data: Inhomogeneous and temperature-dependent p-InGaAs/n-InP band offset modification by silicon δ doping: an internal photoemission study.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; September 1 1995, Vol. 78, p3258-3261, 4p
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      – Type: doi
        Value: 10.1063/1.360014
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 4
        StartPage: 3258
    Titles:
      – TitleFull: Inhomogeneous and temperature-dependent p-InGaAs/n-InP band offset modification by silicon δ doping: an internal photoemission study.
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            NameFull: Almeida, J.
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            NameFull: dell'Orto, Tiziana
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            NameFull: Coluzza, C.
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            – D: 01
              M: 09
              Text: September 1 1995
              Type: published
              Y: 1995
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              Value: 78
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            – TitleFull: Journal of Applied Physics
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