Schottky barrier height dependence on the silicon interlayer thickness of Au/Si/n-GaAs contacts: chemistry of interface formation study.

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Bibliographic Details
Title: Schottky barrier height dependence on the silicon interlayer thickness of Au/Si/n-GaAs contacts: chemistry of interface formation study.
Authors: Ivančo, J., Almeida, J., Coluzza, C.
Source: Vacuum; July-August 1998, Vol. 50 Issue 3-4, p407-411, 5p
Database: Applied Science & Technology Source
Description
ISSN:0042207X
DOI:10.1016/S0042-207X(98)00074-8