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Schottky barrier height dependence on the silicon interlayer thickness of Au/Si/n-GaAs contacts: chemistry of interface formation study.

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Title: Schottky barrier height dependence on the silicon interlayer thickness of Au/Si/n-GaAs contacts: chemistry of interface formation study.
Authors: Ivančo, J., Almeida, J., Coluzza, C.
Source: Vacuum; July-August 1998, Vol. 50 Issue 3-4, p407-411, 5p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500389658
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Schottky barrier height dependence on the silicon interlayer thickness of Au/Si/n-GaAs contacts: chemistry of interface formation study.
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  Data: <searchLink fieldCode="AU" term="%22Ivančo%2C+J%2E%22">Ivančo, J.</searchLink><br /><searchLink fieldCode="AU" term="%22Almeida%2C+J%2E%22">Almeida, J.</searchLink><br /><searchLink fieldCode="AU" term="%22Coluzza%2C+C%2E%22">Coluzza, C.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Vacuum%22">Vacuum</searchLink>; July-August 1998, Vol. 50 Issue 3-4, p407-411, 5p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500389658
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      – Type: doi
        Value: 10.1016/S0042-207X(98)00074-8
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 407
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      – TitleFull: Schottky barrier height dependence on the silicon interlayer thickness of Au/Si/n-GaAs contacts: chemistry of interface formation study.
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            NameFull: Ivančo, J.
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            NameFull: Almeida, J.
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            NameFull: Coluzza, C.
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            – D: 01
              M: 07
              Text: July-August 1998
              Type: published
              Y: 1998
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              Value: 50
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