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Au/GaAs(100) interface Schottky barrier modification by a silicon nitride intralayer.

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Bibliographic Details
Title:	Au/GaAs(100) interface Schottky barrier modification by a silicon nitride intralayer.
Authors:	Almeida, J., Coluzza, C., dell'Orto, T.
Source:	Journal of Applied Physics; January 1 1997, Vol. 81, p292-296, 5p
Database:	Applied Science & Technology Source

Description
ISSN:	00218979
DOI:	10.1063/1.363847