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Au/GaAs(100) interface Schottky barrier modification by a silicon nitride intralayer.

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Title: Au/GaAs(100) interface Schottky barrier modification by a silicon nitride intralayer.
Authors: Almeida, J., Coluzza, C., dell'Orto, T.
Source: Journal of Applied Physics; January 1 1997, Vol. 81, p292-296, 5p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500397401
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Au/GaAs(100) interface Schottky barrier modification by a silicon nitride intralayer.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; January 1 1997, Vol. 81, p292-296, 5p
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        Value: 10.1063/1.363847
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 292
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      – TitleFull: Au/GaAs(100) interface Schottky barrier modification by a silicon nitride intralayer.
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            NameFull: Almeida, J.
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            NameFull: Coluzza, C.
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            NameFull: dell'Orto, T.
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              Text: January 1 1997
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              Y: 1997
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              Value: 81
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