Linear in-plane uniaxial stress effects on the device characteristics of AlGaAs/GaAs modulation doped field effect transistors.

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Bibliographic Details
Title: Linear in-plane uniaxial stress effects on the device characteristics of AlGaAs/GaAs modulation doped field effect transistors.
Authors: Fung, A. K., Cong, L., Albrecht, J. D.
Source: Journal of Applied Physics; January 1 1997, Vol. 81, p502-505, 4p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.364126