APA (7th ed.) Citation

Fung, A. K., Cong, L., & Albrecht, J. D. (1997). Linear in-plane uniaxial stress effects on the device characteristics of AlGaAs/GaAs modulation doped field effect transistors. Journal of Applied Physics, 81, 502. https://doi.org/10.1063/1.364126

Chicago Style (17th ed.) Citation

Fung, A. K., L. Cong, and J. D. Albrecht. "Linear In-plane Uniaxial Stress Effects on the Device Characteristics of AlGaAs/GaAs Modulation Doped Field Effect Transistors." Journal of Applied Physics 81 (1997): 502. https://doi.org/10.1063/1.364126.

MLA (9th ed.) Citation

Fung, A. K., et al. "Linear In-plane Uniaxial Stress Effects on the Device Characteristics of AlGaAs/GaAs Modulation Doped Field Effect Transistors." Journal of Applied Physics, vol. 81, 1997, p. 502, https://doi.org/10.1063/1.364126.