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Linear in-plane uniaxial stress effects on the device characteristics of AlGaAs/GaAs modulation doped field effect transistors.

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Bibliographic Details
Title: Linear in-plane uniaxial stress effects on the device characteristics of AlGaAs/GaAs modulation doped field effect transistors.
Authors: Fung, A. K., Cong, L., Albrecht, J. D.
Source: Journal of Applied Physics; January 1 1997, Vol. 81, p502-505, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500397563
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Linear in-plane uniaxial stress effects on the device characteristics of AlGaAs/GaAs modulation doped field effect transistors.
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  Data: <searchLink fieldCode="AU" term="%22Fung%2C+A%2E+K%2E%22">Fung, A. K.</searchLink><br /><searchLink fieldCode="AU" term="%22Cong%2C+L%2E%22">Cong, L.</searchLink><br /><searchLink fieldCode="AU" term="%22Albrecht%2C+J%2E+D%2E%22">Albrecht, J. D.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; January 1 1997, Vol. 81, p502-505, 4p
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      – Type: doi
        Value: 10.1063/1.364126
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 502
    Titles:
      – TitleFull: Linear in-plane uniaxial stress effects on the device characteristics of AlGaAs/GaAs modulation doped field effect transistors.
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            NameFull: Fung, A. K.
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            NameFull: Cong, L.
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            NameFull: Albrecht, J. D.
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            – D: 01
              M: 01
              Text: January 1 1997
              Type: published
              Y: 1997
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              Value: 81
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            – TitleFull: Journal of Applied Physics
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