Ferroelectric field effect transistor based on epitaxial perovskite heterostructures.

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Bibliographic Details
Title:	Ferroelectric field effect transistor based on epitaxial perovskite heterostructures.
Authors:	Mathews, S., Ramesh, R., Venkatesan, T.
Source:	Science; April 11 1997, Vol. 276, p238-240, 3p
Database:	Applied Science & Technology Source

Description
ISSN:	00368075
DOI:	10.1126/science.276.5310.238