Ferroelectric field effect transistor based on epitaxial perovskite heterostructures.
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| Title: | Ferroelectric field effect transistor based on epitaxial perovskite heterostructures. |
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| Authors: | Mathews, S., Ramesh, R., Venkatesan, T. |
| Source: | Science; April 11 1997, Vol. 276, p238-240, 3p |
| Database: | Applied Science & Technology Source |
| FullText | Links: – Type: pdflink Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 500440932 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Ferroelectric field effect transistor based on epitaxial perovskite heterostructures. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Mathews%2C+S%2E%22">Mathews, S.</searchLink><br /><searchLink fieldCode="AU" term="%22Ramesh%2C+R%2E%22">Ramesh, R.</searchLink><br /><searchLink fieldCode="AU" term="%22Venkatesan%2C+T%2E%22">Venkatesan, T.</searchLink> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Science%22">Science</searchLink>; April 11 1997, Vol. 276, p238-240, 3p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500440932 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1126/science.276.5310.238 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 3 StartPage: 238 Titles: – TitleFull: Ferroelectric field effect transistor based on epitaxial perovskite heterostructures. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Mathews, S. – PersonEntity: Name: NameFull: Ramesh, R. – PersonEntity: Name: NameFull: Venkatesan, T. IsPartOfRelationships: – BibEntity: Dates: – D: 11 M: 04 Text: April 11 1997 Type: published Y: 1997 Identifiers: – Type: issn-print Value: 00368075 Numbering: – Type: volume Value: 276 Titles: – TitleFull: Science Type: main |
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