In situ selective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenic.
Saved in:
| Title: | In situ selective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenic. |
|---|---|
| Authors: | Li, N. Y., Hsin, Y. M., Bi, W. G. |
| Source: | Applied Physics Letters; May 12 1997, Vol. 70, p2589-2591, 3p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
|---|---|
| DOI: | 10.1063/1.119087 |
