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In situ selective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenic.

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Title: In situ selective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenic.
Authors: Li, N. Y., Hsin, Y. M., Bi, W. G.
Source: Applied Physics Letters; May 12 1997, Vol. 70, p2589-2591, 3p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 500453964
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: In situ selective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenic.
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  Data: <searchLink fieldCode="AU" term="%22Li%2C+N%2E+Y%2E%22">Li, N. Y.</searchLink><br /><searchLink fieldCode="AU" term="%22Hsin%2C+Y%2E+M%2E%22">Hsin, Y. M.</searchLink><br /><searchLink fieldCode="AU" term="%22Bi%2C+W%2E+G%2E%22">Bi, W. G.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; May 12 1997, Vol. 70, p2589-2591, 3p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500453964
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      – Type: doi
        Value: 10.1063/1.119087
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 2589
    Titles:
      – TitleFull: In situ selective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenic.
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            NameFull: Li, N. Y.
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            NameFull: Hsin, Y. M.
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            NameFull: Bi, W. G.
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            – D: 12
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              Text: May 12 1997
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              Y: 1997
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              Value: 70
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