Spatial characterization of doped SiC wafers by Raman spectroscopy.

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Bibliographic Details
Title: Spatial characterization of doped SiC wafers by Raman spectroscopy.
Authors: Burton, J. C., Sun, L., Pophristic, M.
Source: Journal of Applied Physics; December 1 1998, Vol. 84 Issue 11, p6268-6273, 6p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.368947