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Spatial characterization of doped SiC wafers by Raman spectroscopy.

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Title: Spatial characterization of doped SiC wafers by Raman spectroscopy.
Authors: Burton, J. C., Sun, L., Pophristic, M.
Source: Journal of Applied Physics; December 1 1998, Vol. 84 Issue 11, p6268-6273, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500459076
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Spatial characterization of doped SiC wafers by Raman spectroscopy.
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  Data: <searchLink fieldCode="AU" term="%22Burton%2C+J%2E+C%2E%22">Burton, J. C.</searchLink><br /><searchLink fieldCode="AU" term="%22Sun%2C+L%2E%22">Sun, L.</searchLink><br /><searchLink fieldCode="AU" term="%22Pophristic%2C+M%2E%22">Pophristic, M.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; December 1 1998, Vol. 84 Issue 11, p6268-6273, 6p
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        Value: 10.1063/1.368947
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 6268
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      – TitleFull: Spatial characterization of doped SiC wafers by Raman spectroscopy.
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            NameFull: Burton, J. C.
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            NameFull: Sun, L.
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            NameFull: Pophristic, M.
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              Text: December 1 1998
              Type: published
              Y: 1998
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              Value: 84
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