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Interface properties of MOS structures on n-type 6H-SiC.

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Bibliographic Details
Title: Interface properties of MOS structures on n-type 6H-SiC.
Authors: Friedrichs, P., Burte, E. P., Schörner, R.
Source: Solid-State Electronics; July 1997, Vol. 41, p991-994, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500468787
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Interface properties of MOS structures on n-type 6H-SiC.
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      – Type: doi
        Value: 10.1016/S0038-1101(97)00011-7
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 991
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      – TitleFull: Interface properties of MOS structures on n-type 6H-SiC.
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            NameFull: Friedrichs, P.
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            NameFull: Burte, E. P.
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            NameFull: Schörner, R.
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            – D: 01
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              Text: July 1997
              Type: published
              Y: 1997
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              Value: 41
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