Evolution of deep-level centers in p-type silicon following ion implantation at 85K.
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| Title: | Evolution of deep-level centers in p-type silicon following ion implantation at 85K. |
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| Authors: | Cho, C. R., Yarykin, N., Brown, R. A. |
| Source: | Applied Physics Letters; March 1 1999, Vol. 74 Issue 9, p1263-1265, 3p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
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| DOI: | 10.1063/1.123519 |
