Electrical characterization of a He ion implantation-induced deep level existing in p+ n InP junctions.
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| Title: | Electrical characterization of a He ion implantation-induced deep level existing in p+ n InP junctions. |
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| Authors: | Quintanilla, L., Pinacho, R., Enriquez, L. |
| Source: | Journal of Applied Physics; June 1 1999, Vol. 85 Issue 11, p7978-7980, 3p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.369388 |
