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Strain-induced island scaling during Si1-xGex heteroepitaxy.

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Bibliographic Details
Title: Strain-induced island scaling during Si1-xGex heteroepitaxy.
Authors: Dorsch, W., Strunk, H. P., Wawra, H.
Source: Applied Physics Letters; January 12 1998, Vol. 72, p179-181, 3p
Database: Applied Science & Technology Source
Description
ISSN:00036951
DOI:10.1063/1.120622