The impact of in situ photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295K.
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| Title: | The impact of in situ photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295K. |
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| Authors: | Varykin, N., Cho, C. R., Rozgonyi, G. A. |
| Source: | Applied Physics Letters; July 12 1999, Vol. 75 Issue 2, p241-243, 3p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
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| DOI: | 10.1063/1.124335 |
