Resonance enhancement of electronic Raman scattering from nitrogen defect levels in silicon carbide.
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| Title: | Resonance enhancement of electronic Raman scattering from nitrogen defect levels in silicon carbide. |
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| Authors: | Burton, J. C., Long, F. H., Ferguson, I. T. |
| Source: | Journal of Applied Physics; August 15 1999, Vol. 86 Issue 4, p2073-2077, 5p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.371011 |
