APA (7th ed.) Citation

Burton, J. C., Long, F. H., & Ferguson, I. T. (1999). Resonance enhancement of electronic Raman scattering from nitrogen defect levels in silicon carbide. Journal of Applied Physics, 86(4), 2073. https://doi.org/10.1063/1.371011

Chicago Style (17th ed.) Citation

Burton, J. C., F. H. Long, and I. T. Ferguson. "Resonance Enhancement of Electronic Raman Scattering from Nitrogen Defect Levels in Silicon Carbide." Journal of Applied Physics 86, no. 4 (1999): 2073. https://doi.org/10.1063/1.371011.

MLA (9th ed.) Citation

Burton, J. C., et al. "Resonance Enhancement of Electronic Raman Scattering from Nitrogen Defect Levels in Silicon Carbide." Journal of Applied Physics, vol. 86, no. 4, 1999, p. 2073, https://doi.org/10.1063/1.371011.