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Resonance enhancement of electronic Raman scattering from nitrogen defect levels in silicon carbide.

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Title: Resonance enhancement of electronic Raman scattering from nitrogen defect levels in silicon carbide.
Authors: Burton, J. C., Long, F. H., Ferguson, I. T.
Source: Journal of Applied Physics; August 15 1999, Vol. 86 Issue 4, p2073-2077, 5p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500570727
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Resonance enhancement of electronic Raman scattering from nitrogen defect levels in silicon carbide.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Burton%2C+J%2E+C%2E%22">Burton, J. C.</searchLink><br /><searchLink fieldCode="AU" term="%22Long%2C+F%2E+H%2E%22">Long, F. H.</searchLink><br /><searchLink fieldCode="AU" term="%22Ferguson%2C+I%2E+T%2E%22">Ferguson, I. T.</searchLink>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; August 15 1999, Vol. 86 Issue 4, p2073-2077, 5p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500570727
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1063/1.371011
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 5
        StartPage: 2073
    Titles:
      – TitleFull: Resonance enhancement of electronic Raman scattering from nitrogen defect levels in silicon carbide.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Burton, J. C.
      – PersonEntity:
          Name:
            NameFull: Long, F. H.
      – PersonEntity:
          Name:
            NameFull: Ferguson, I. T.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 15
              M: 08
              Text: August 15 1999
              Type: published
              Y: 1999
          Identifiers:
            – Type: issn-print
              Value: 00218979
          Numbering:
            – Type: volume
              Value: 86
            – Type: issue
              Value: 4
          Titles:
            – TitleFull: Journal of Applied Physics
              Type: main
ResultId 1