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Resonance enhancement of electronic Raman scattering from nitrogen defect levels in silicon carbide.

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Bibliographic Details
Title: Resonance enhancement of electronic Raman scattering from nitrogen defect levels in silicon carbide.
Authors: Burton, J. C., Long, F. H., Ferguson, I. T.
Source: Journal of Applied Physics; August 15 1999, Vol. 86 Issue 4, p2073-2077, 5p
Database: Applied Science & Technology Source
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