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Ostwald ripening of end-of-range defects in silicon.

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Bibliographic Details
Title: Ostwald ripening of end-of-range defects in silicon.
Authors: Bonafos, C., Mathiot, D., Claverie, A.
Source: Journal of Applied Physics; March 15 1998, Vol. 83 Issue 6, p3008-3017, 10p
Database: Applied Science & Technology Source
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