Rauthan, C. M. S., Virdi, G. S., & Pathak, B. C. (1998). Improvement in buried silicon nitride silicon-on-insulator structures by fluorine-ion implantation. Journal of Applied Physics, 83(7), 3668. https://doi.org/10.1063/1.366587
Chicago Style (17th ed.) CitationRauthan, C. M. S., G. S. Virdi, and B. C. Pathak. "Improvement in Buried Silicon Nitride Silicon-on-insulator Structures by Fluorine-ion Implantation." Journal of Applied Physics 83, no. 7 (1998): 3668. https://doi.org/10.1063/1.366587.
MLA (9th ed.) CitationRauthan, C. M. S., et al. "Improvement in Buried Silicon Nitride Silicon-on-insulator Structures by Fluorine-ion Implantation." Journal of Applied Physics, vol. 83, no. 7, 1998, p. 3668, https://doi.org/10.1063/1.366587.
Warning: These citations may not always be 100% accurate.