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Improvement in buried silicon nitride silicon-on-insulator structures by fluorine-ion implantation.

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Title: Improvement in buried silicon nitride silicon-on-insulator structures by fluorine-ion implantation.
Authors: Rauthan, C. M. S., Virdi, G. S., Pathak, B. C.
Source: Journal of Applied Physics; April 1 1998, Vol. 83 Issue 7, p3668-3677, 10p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500587787
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Improvement in buried silicon nitride silicon-on-insulator structures by fluorine-ion implantation.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; April 1 1998, Vol. 83 Issue 7, p3668-3677, 10p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500587787
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        Value: 10.1063/1.366587
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        Text: English
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        PageCount: 10
        StartPage: 3668
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      – TitleFull: Improvement in buried silicon nitride silicon-on-insulator structures by fluorine-ion implantation.
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            NameFull: Rauthan, C. M. S.
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            NameFull: Virdi, G. S.
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            NameFull: Pathak, B. C.
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              Text: April 1 1998
              Type: published
              Y: 1998
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              Value: 83
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