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Enhanced injection in n++ -poly/SiOx/SiO2/p-sub MOS capacitors for low-voltage nonvolatile memory applications: experiment.

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Bibliographic Details
Title:	Enhanced injection in n++ -poly/SiOx/SiO2/p-sub MOS capacitors for low-voltage nonvolatile memory applications: experiment.
Authors:	Irrera, Fernanda, Russo, Felice
Source:	IEEE Transactions on Electron Devices; December 1999, Vol. 46 Issue 12, p2315-2322, 8p
Database:	Applied Science & Technology Source

Description
ISSN:	00189383
DOI:	10.1109/16.808071