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Enhanced injection in n++ -poly/SiOx/SiO2/p-sub MOS capacitors for low-voltage nonvolatile memory applications: experiment.

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Title: Enhanced injection in n++ -poly/SiOx/SiO2/p-sub MOS capacitors for low-voltage nonvolatile memory applications: experiment.
Authors: Irrera, Fernanda, Russo, Felice
Source: IEEE Transactions on Electron Devices; December 1999, Vol. 46 Issue 12, p2315-2322, 8p
Database: Applied Science & Technology Source
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  Data: Enhanced injection in n++ -poly/SiOx/SiO2/p-sub MOS capacitors for low-voltage nonvolatile memory applications: experiment.
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  Data: <searchLink fieldCode="AU" term="%22Irrera%2C+Fernanda%22">Irrera, Fernanda</searchLink><br /><searchLink fieldCode="AU" term="%22Russo%2C+Felice%22">Russo, Felice</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Electron+Devices%22">IEEE Transactions on Electron Devices</searchLink>; December 1999, Vol. 46 Issue 12, p2315-2322, 8p
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        Value: 10.1109/16.808071
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      – Code: eng
        Text: English
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        PageCount: 8
        StartPage: 2315
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      – TitleFull: Enhanced injection in n++ -poly/SiOx/SiO2/p-sub MOS capacitors for low-voltage nonvolatile memory applications: experiment.
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            NameFull: Irrera, Fernanda
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            NameFull: Russo, Felice
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              Text: December 1999
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              Y: 1999
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