A comparative study of radiation- and stress-induced leakage currents in thin gate oxides.

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Bibliographic Details
Title: A comparative study of radiation- and stress-induced leakage currents in thin gate oxides.
Authors: Ang, C. H., Ling, C. H., Cheng, Z. Y.
Source: Semiconductor Science & Technology; October 2000, Vol. 15 Issue 10, p961-964, 4p
Database: Applied Science & Technology Source
Description
ISSN:02681242