Ang, C. H., Ling, C. H., & Cheng, Z. Y. (2000). A comparative study of radiation- and stress-induced leakage currents in thin gate oxides. Semiconductor Science & Technology, 15(10), 961.
Chicago Style (17th ed.) CitationAng, C. H., C. H. Ling, and Z. Y. Cheng. "A Comparative Study of Radiation- and Stress-induced Leakage Currents in Thin Gate Oxides." Semiconductor Science & Technology 15, no. 10 (2000): 961.
MLA (9th ed.) CitationAng, C. H., et al. "A Comparative Study of Radiation- and Stress-induced Leakage Currents in Thin Gate Oxides." Semiconductor Science & Technology, vol. 15, no. 10, 2000, p. 961.
Warning: These citations may not always be 100% accurate.
