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A comparative study of radiation- and stress-induced leakage currents in thin gate oxides.

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Title: A comparative study of radiation- and stress-induced leakage currents in thin gate oxides.
Authors: Ang, C. H., Ling, C. H., Cheng, Z. Y.
Source: Semiconductor Science & Technology; October 2000, Vol. 15 Issue 10, p961-964, 4p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500630528
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: A comparative study of radiation- and stress-induced leakage currents in thin gate oxides.
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  Data: <searchLink fieldCode="AU" term="%22Ang%2C+C%2E+H%2E%22">Ang, C. H.</searchLink><br /><searchLink fieldCode="AU" term="%22Ling%2C+C%2E+H%2E%22">Ling, C. H.</searchLink><br /><searchLink fieldCode="AU" term="%22Cheng%2C+Z%2E+Y%2E%22">Cheng, Z. Y.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Semiconductor+Science+%26+Technology%22">Semiconductor Science & Technology</searchLink>; October 2000, Vol. 15 Issue 10, p961-964, 4p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500630528
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 961
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      – TitleFull: A comparative study of radiation- and stress-induced leakage currents in thin gate oxides.
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            NameFull: Ang, C. H.
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            NameFull: Ling, C. H.
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              Text: October 2000
              Type: published
              Y: 2000
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