Annealing of Fowler-Nordheim stress-induced leakage currents in thin silicon dioxide films.

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Bibliographic Details
Title: Annealing of Fowler-Nordheim stress-induced leakage currents in thin silicon dioxide films.
Authors: Ang, C. H., Ling, C. H., Cheng, Z. Y.
Source: Journal of the Electrochemical Society; December 2000, Vol. 147 Issue 12, p4676-4682, 7p
Database: Applied Science & Technology Source
Description
ISSN:00134651
DOI:10.1149/1.1394122