APA (7th ed.) Citation

Ang, C. H., Ling, C. H., & Cheng, Z. Y. (2000). Annealing of Fowler-Nordheim stress-induced leakage currents in thin silicon dioxide films. Journal of the Electrochemical Society, 147(12), 4676. https://doi.org/10.1149/1.1394122

Chicago Style (17th ed.) Citation

Ang, C. H., C. H. Ling, and Z. Y. Cheng. "Annealing of Fowler-Nordheim Stress-induced Leakage Currents in Thin Silicon Dioxide Films." Journal of the Electrochemical Society 147, no. 12 (2000): 4676. https://doi.org/10.1149/1.1394122.

MLA (9th ed.) Citation

Ang, C. H., et al. "Annealing of Fowler-Nordheim Stress-induced Leakage Currents in Thin Silicon Dioxide Films." Journal of the Electrochemical Society, vol. 147, no. 12, 2000, p. 4676, https://doi.org/10.1149/1.1394122.