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Complete surface exfoliation of 4H-SiC by H+- and Si+-coimplantation.

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Bibliographic Details
Title:	Complete surface exfoliation of 4H-SiC by H+- and Si+-coimplantation.
Authors:	Bennett, J. A., Holland, O. W., Budde, M.
Source:	Applied Physics Letters; May 29 2000, Vol. 76 Issue 22, p3265-3267, 3p
Database:	Applied Science & Technology Source

Description
ISSN:	00036951
DOI:	10.1063/1.126640