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Complete surface exfoliation of 4H-SiC by H+- and Si+-coimplantation.

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Title: Complete surface exfoliation of 4H-SiC by H+- and Si+-coimplantation.
Authors: Bennett, J. A., Holland, O. W., Budde, M.
Source: Applied Physics Letters; May 29 2000, Vol. 76 Issue 22, p3265-3267, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
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PubType: Academic Journal
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; May 29 2000, Vol. 76 Issue 22, p3265-3267, 3p
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        Value: 10.1063/1.126640
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        Text: English
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      – TitleFull: Complete surface exfoliation of 4H-SiC by H+- and Si+-coimplantation.
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            NameFull: Bennett, J. A.
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              Text: May 29 2000
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              Y: 2000
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