A technique to form a porous silicon layer with no backside contact by alternating current electrochemical process.

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Bibliographic Details
Title: A technique to form a porous silicon layer with no backside contact by alternating current electrochemical process.
Authors: El-Bahar, A., Nemirovsky, Y.
Source: Applied Physics Letters; July 10 2000, Vol. 77 Issue 2, p208-210, 3p
Database: Applied Science & Technology Source
Description
ISSN:00036951
DOI:10.1063/1.126926