El-Bahar, A., & Nemirovsky, Y. (2000). A technique to form a porous silicon layer with no backside contact by alternating current electrochemical process. Applied Physics Letters, 77(2), 208. https://doi.org/10.1063/1.126926
Chicago Style (17th ed.) CitationEl-Bahar, A., and Y. Nemirovsky. "A Technique to Form a Porous Silicon Layer with No Backside Contact by Alternating Current Electrochemical Process." Applied Physics Letters 77, no. 2 (2000): 208. https://doi.org/10.1063/1.126926.
MLA (9th ed.) CitationEl-Bahar, A., and Y. Nemirovsky. "A Technique to Form a Porous Silicon Layer with No Backside Contact by Alternating Current Electrochemical Process." Applied Physics Letters, vol. 77, no. 2, 2000, p. 208, https://doi.org/10.1063/1.126926.
Warning: These citations may not always be 100% accurate.
