The formation of shallow low-resistance source-drain regions for VLSI CMOS technologies.

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Bibliographic Details
Title: The formation of shallow low-resistance source-drain regions for VLSI CMOS technologies.
Authors: Butler, Alan L., Foster, D. J.
Source: IEEE Journal of Solid-State Circuits; February 1985, Vol. 20, p70-75, 6p
Database: Applied Science & Technology Source
Description
ISSN:00189200
DOI:10.1109/JSSC.1985.1052278