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The formation of shallow low-resistance source-drain regions for VLSI CMOS technologies.

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Bibliographic Details
Title: The formation of shallow low-resistance source-drain regions for VLSI CMOS technologies.
Authors: Butler, Alan L., Foster, D. J.
Source: IEEE Journal of Solid-State Circuits; February 1985, Vol. 20, p70-75, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500765057
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: The formation of shallow low-resistance source-drain regions for VLSI CMOS technologies.
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  Data: <searchLink fieldCode="AU" term="%22Butler%2C+Alan+L%2E%22">Butler, Alan L.</searchLink><br /><searchLink fieldCode="AU" term="%22Foster%2C+D%2E+J%2E%22">Foster, D. J.</searchLink>
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1109/JSSC.1985.1052278
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 6
        StartPage: 70
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      – TitleFull: The formation of shallow low-resistance source-drain regions for VLSI CMOS technologies.
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          Name:
            NameFull: Butler, Alan L.
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            NameFull: Foster, D. J.
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              M: 02
              Text: February 1985
              Type: published
              Y: 1985
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              Value: 00189200
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              Value: 20
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            – TitleFull: IEEE Journal of Solid-State Circuits
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