Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method.
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| Title: | Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method. |
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| Authors: | Usami, N., Azuma, Y., Ujihara, T. |
| Source: | Semiconductor Science & Technology; August 2001, Vol. 16 Issue 8, p699-703, 5p |
| Database: | Applied Science & Technology Source |
| ISSN: | 02681242 |
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