APA (7th ed.) Citation

Usami, N., Azuma, Y., & Ujihara, T. (2001). Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method. Semiconductor Science & Technology, 16(8), 699.

Chicago Style (17th ed.) Citation

Usami, N., Y. Azuma, and T. Ujihara. "Molecular Beam Epitaxy of GaAs on Nearly Lattice-matched SiGe Substrates Grown by the Multicomponent Zone-melting Method." Semiconductor Science & Technology 16, no. 8 (2001): 699.

MLA (9th ed.) Citation

Usami, N., et al. "Molecular Beam Epitaxy of GaAs on Nearly Lattice-matched SiGe Substrates Grown by the Multicomponent Zone-melting Method." Semiconductor Science & Technology, vol. 16, no. 8, 2001, p. 699.