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Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method.

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Bibliographic Details
Title: Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method.
Authors: Usami, N., Azuma, Y., Ujihara, T.
Source: Semiconductor Science & Technology; August 2001, Vol. 16 Issue 8, p699-703, 5p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500778242
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method.
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  Data: <searchLink fieldCode="AU" term="%22Usami%2C+N%2E%22">Usami, N.</searchLink><br /><searchLink fieldCode="AU" term="%22Azuma%2C+Y%2E%22">Azuma, Y.</searchLink><br /><searchLink fieldCode="AU" term="%22Ujihara%2C+T%2E%22">Ujihara, T.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Semiconductor+Science+%26+Technology%22">Semiconductor Science & Technology</searchLink>; August 2001, Vol. 16 Issue 8, p699-703, 5p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500778242
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      – Code: eng
        Text: English
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      – TitleFull: Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method.
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            NameFull: Usami, N.
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            NameFull: Azuma, Y.
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              Text: August 2001
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              Y: 2001
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