Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon.

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Bibliographic Details
Title: Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon.
Authors: Coleman, P. G., Burrows, C. P., Knights, A. P.
Source: Applied Physics Letters; February 11 2002, Vol. 80 Issue 6, p947-949, 3p
Database: Applied Science & Technology Source
Description
ISSN:00036951
DOI:10.1063/1.1448856